1. Which process is used in E-beam machines?
a) raster scanning
b) vector scanning
c) raster & vector scanning
d) none of the mentioned
Explanation: The two approaches to the design of E-beam machines are raster scanning and vector scanning.
2. What is the feature of vector scanning?
a) faster
b) slow
c) easy handling
d) very simple design
Explanation: Vector scanning is faster but data handling involved is more complex. Vector scanning is done between the end points
3. Which has high input resistance?
a) nMOS
b) CMOS
c) pMOS
d) BiCMOS
Explanation: CMOS technology has high input resistance and is best for constructing simple low-power logic gates
4. BiCMOS has lower standby leakage current.
a) True
b) False
Explanation: BiCMOS has the potential for high standby leakage current and has high power consumption compared to CMOS.
5. What is Lithography?
a) Process used to transfer a pattern to a layer on the chip
b) Process used to develop an oxidation layer on the chip
c) Process used to develop a metal layer on the chip
d) Process used to produce the chip
Explanation: Lithography is the process used to develop a pattern to a layer on the chip.
6. Silicon oxide is patterned on a substrate using ____________
a) Physical lithography
b) Photolithography
c) Chemical lithography
d) Mechanical lithography
Explanation:Silicon oxide is patterned on a substrate using Photolithography.
7. Positive photo resists are used more than negative photo resists because ___________
a) Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists
b) Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists
c) Negative photo resists are less sensitive to light
d) Positive photo resists are less sensitive to light
Explanation: Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists. Therefore, negative photo resists are-used less commonly in the manufacturing of high-density integrated circuits.
8. The ______ is used to reduce the resistivity of poly silicon.
a) Photo resist
b) Etching
c) Doping impurities
d) None of the mentioned
Explanation: The resistivity of poly silicon is reduced by Doping impurities.
9. The isolated active areas are created by technique known as ___________
a) Etched field-oxide isolation
b) Local Oxidation of Silicon
c) Etched field-oxide isolation or Local Oxidation of Silicon
d) None of the mentioned
Explanation: To create isolated active areas both the techniques can be used. Among them Local Oxidation of Silicon(LOCOS) is most efficient
10. The chemical used for shielding the active areas to achieve selective oxide growth is?
a) Silver Nitride
b) Silicon Nitride
c) Hydrofluoric acid
d) Polysilicon
Explanation: Selective oxide growth is achieved by shielding the active areas. Silicon nitride (Si3N4) is used for shielding the active areas during oxidation, which effectively inhibits oxide growth