1. Which of the following devices does not belong to the transistor family?
a) IGBT
b) MOSFET
c) GTO
d) BJT
Explanation: GTO is gate turn off transistor, it belongs to the Thyristor family. All the other devices belong to the transistor family.
2. A power transistor is a
a) three layer, three junction device
b) three layer, two junction device
c) two layer, one junction device
d) four layer, three junction device
Explanation: It has three layers p-n-p or n-p-n forming two p-n junctions
3. In a power transistor, ____ is the controlled parameter.
a) VBE
b) VCE
c) IB
d) IC
Explanation: The collector current is the controlled parameter.
4. A power transistor is a _________ device.
a) two terminal, bipolar, voltage controlled
b) two terminal, unipolar, current controlled
c) three terminal, unipolar, voltage controlled
d) three terminal, bipolar, current controlled
Explanation: Power transistor is simply many BJT’s connected in series parallel on a single silicon chip for power applications. It is a three terminal, bipolar, current controlled device.
5. In a power transistor, _________ is the controlling parameter.
a) VBE
b) VCE
c) IB
d) IC
Explanation: The base current controls the collector current. Hence, the base current Ib is the controlling parameter.
6. In a power transistor, the IB vs VBE curve is
a) a parabolic curve
b) an exponentially decaying curve
c) resembling the diode curve
d) a straight line Y = IB
Explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.
7. For a power transistor, if the base current IB is increased keeping VCE constant, then
a) IC increases
b) IC decreases
c) IC remains constant
d) none of the mentioned
Explanation: Ic is directly proportional to Ic.
8. The forward current gain α is given by
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB
Explanation: Collector current by emitter current is the current gain, its value is close to one but never greater than.
9. The value of β is given by the expression
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB
Explanation: Collector current by the base current is beta, its value is in the range 50 to 300
10.A power BJT is used as a power control switch by biasing it in the cut off region (off state) or in the saturation region (on state). In the on state
a) both the base-emitter & base-collector junctions are forward biased
b) the base-emitter junction is reverse biased, and the base collector junction is forward biased
c) the base-emitter junction is forward biased, and the base collector junction is reversed biased
d) both the base-collector & the base-emitter junctions are reversed biased
Explanation: When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.