Semiconductor Devices Questions and Answers Part-10

1. What is the SI unit of electron diffusion constant?
a) cm2/s
b) m2/s
c) m/s
d) none

Answer: b
Explanation: J=eDdn/dx
So D=q*m/ (q*s*(1/m))
=m2/s.

2. Calculate the diffusion current density when the concentration of electron varies from the 1*1018 to 7*1017 cm-3 over a distance of 0.10 cm.D=225cm2/s
a) 100 A/cm2
b) 108 A/cm2
c) 0.01A/cm2
d) None

Answer: b
Explanation: J=eDdn/dx
J=1.6*10-19*225*(1018-(7*1017))/0.1
=108A/cm2.

3. Which is the correct formula for the Jp?
a) Jp=qDdp/dx
b) Jp=pDdn/dx
c) Jp=-qDdp/dx
d) None

Answer: c
Explanation: Jp is negative for the p type of semiconductors.

4. What is the direction of the electron diffusion current density relative to the electron flux?
a) Same direction
b) Opposite to each other
c) Perpendicular to each other
d) At 270 degrees to each other

Answer: b
Explanation: From the graph between electron concentration and the distance, we can see that the direction of the electron diffusion current density is opposite to the electron flux.

5. In diffusion, the particles flow from a region of _______ to region of ___________
a) High, low
b) Low , high
c) High , medium
d) Low, medium

Answer: a
Explanation: Diffusion is the process of flow of particles form the region of the high concentration to a region of low concentration.

6. Which of the following parameter describes the best movement of the electrons inside a semiconductor?
a) Velocity gradient
b) Diffusion
c) Mobility
d) Density gradient

Answer: c
Explanation: Mobility is defined as the movement of the electrons inside a semiconductor. On the other hand, velocity gradient is the ratio of velocity to distance.

7. Which of the following term isn’t a part of the total current density in a semiconductor?
a) Temperature
b) µ
c) e
d) E

Answer: a
Explanation: J=enµE+epµE+eDdn/dx-eDdp/dx
So, temperature isn’t a part of the equation.

8. What does dn/dx represent?
a) Velocity gradient
b) Volume gradient
c) Density gradient
d) None

Answer: a
Explanation: dn/dx represent velocity gradient.

9. Calculate the diffusion constant for the holes when the mobility of the holes is 400cm2/V-s and temperature is 300K?
a) 1.035m m2/s
b) 0.035m m2/s
c) 1.5m m2/s
d) 1.9m m2/s

Answer: a
Explanation: Dp=VT*μn
= (1.38*10-23*300*400*10-2)/ (1.6*10-19)
= 1.035m m2/s.

10. Calculate the diffusion constant for the electrons when the mobility of the electrons is 325cm2/V-s and temperature is 300K?
a) 0.85 m2/s
b) 0.084 m2/s
c) 0.58 m2/s
d) 0.95 m2/s

Answer: b
Explanation: Dn=VT*μn
= (1.38*10-23*300*325*10-2)/ (1.6*10-19)
= 0.084 m2/s.